MIT Creates Way To ‘Grow’ Transistors Only 3 Atoms Thick

  • Engineers at the Massachusetts Institute of Technology (MIT) developed a way of “growing” transistors only three atoms thick directly onto a semiconductor chip. The result is microscopic layers that can stack on top of each other, creating ultra-dense, ultra-powerful processors.
  • Previously, creating microscopic transistor layers required extreme temperatures of move than 1,000 degrees Fahrenheit, but that melted the silicon chips.
  • MIT researchers instead came up with a new process that kept the silicon cool but heated the transistor materials.
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